VELOCITY-MODULATION TRANSISTOR (VMT) - A NEW FIELD-EFFECT TRANSISTOR CONCEPTSAKAKI H.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 6; PART 2; PP. 381-383; BIBL. 10 REF.Article

MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE DEPENDENCE OF ITS THRESHOLD CURRENTARAKAWA Y; SAKAKI H.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 11; PP. 939-941; BIBL. 8 REF.Article

TANGENTIAL MAGNETORESISTANCE OF TWO DIMENSIONAL ELECTRON GAS AT A SELECTIVELY DOPED N-GAALAS/GAAS HETEROJUNCTION INTERFACE GROWN BY MOLECULAR BEAM EPITAXYOHNO H; SAKAKI H.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 10; PP. 893-895; BIBL. 7 REF.Article

Physical limits of heterostructure field-effect transistors and possibilities of novel quantum field-effect devicesSAKAKI, H.IEEE journal of quantum electronics. 1986, Vol 22, Num 9, pp 1845-1852, issn 0018-9197Article

A NEW METHOD TO CONTROL IMPACT IONIZATION RATE RATIO BY SPATIAL SEPARATION OF AVALANCHING CARRIERS IN MULTILAYERED HETEROSTRUCTURESTANOUE T; SAKAKI H.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 67-70; BIBL. 14 REF.Article

TRANSFERT D'ELECTRONS ET QUANTIFICATION EN SURFACE DANS DES COUCHES D'INVERSION DE SURFACE DANS LE SILICIUMSAKAKI H; SUGANO T.1975; OYO BUTURI; JAP.; DA. 1975; VOL. 44; NO 11; PP. 1131-1152; ABS. ANGL.; BIBL. 130 REF.Article

Experimental studies of boomerang effects following persuasive communicationSAKAKI, H.Psychologia. 1984, Vol 27, Num 2, pp 84-88, issn 0033-2852Article

Physical limits of heterostructure field-effect transistors and possibilities of novel quantum field-effect devicesSAKAKI, H.IEEE journal of quantum electronics. 1986, Vol 22, Num 9, pp 1845-1852, issn 0018-9197Article

MODE CONVERSION AND OPTICAL FILTERING OF OBLIQUELY INCIDENT WAVES IN CORRUGATED WAVEGUIDE FILTERSWAGATSUMA K; SAKAKI H; SAITO S et al.1979; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1979; VOL. 15; NO 7; PP. 632-637; BIBL. 12 REF.Article

A NEW ALGAAS/GAAS HETEROJUNCTION FET WITH INSULATED GATE STRUCTURE (MISSFET)HOTTA T; SAKAKI H; OHNO H et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 2; PART. 1; PP. L122-L124; BIBL. 10 REF.Article

AN INTEGRATED PHOTODETECTOR USING THE PARTIALLY METAL-CLAD-DIELECTRIC-SLAB WAVEGUIDE STRUCTURE.HAMASAKI J; NOSU K; SAKAKI H et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; SUPPL. 1; PP. 321-326; BIBL. 5 REF.; (CONF. SOLID STATE DEVICES. 7. PROC.; TOKYO; 1975)Conference Paper

Proceedings/Yamada conference XII on modulated semiconductor, structures, (second international conference), Kyoto, Japan, 9-13 September 1985SAKAKI, H.Surface science. 1986, Vol 174, Num 1-3, issn 0039-6028, XVIII-710 pConference Proceedings

ETUDES SUR LA STANDARDISATION D'INDICES EPIDEMIOLOGIQUES DE LA TUBERCULOSE. I. TAUX DE MORTALITE STANDARDISE PAR LA PREFECTURE EN 1970NAKAMURA K; UEMATSU M; SAKAKI H et al.1977; KEKKAKU; JAP.; DA. 1977; VOL. 52; NO 10; PP. 489-495; ABS. ANGL.; BIBL. 7 REF.Article

ION-BEAM-INDUCED-CURRENT (IBIC) MONITORING OF UNIFORM AND SELECTIVE ION-ETCHING PROCESSES IN LAYERED STRUCTURESSAKAKI H; SEKIGUCHI Y; YOKOYAMA K et al.1981; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1981; VOL. 19; NO 1; PP. 23-27; BIBL. 5 REF.Article

AUTOMATIC EQUALIZER WITH DEVIDED FREQUENCY BANDWIDTH.SAKAKI H; SHINTANI S; KURODA H et al.1977; TRANS. INST. ELECTRON. COMMUNIC. ENGRS; JAP.; DA. 1977; VOL. E60; NO 4; PP. 202-203Article

Magneto-luminescence study of carrier-induced excitonic to free-carrier transition of radiative recombination in a semiconductor quantum wellYOSHIMURA, H; SAKAKI, H.Surface science. 1990, Vol 229, Num 1-3, pp 508-511, issn 0039-6028, 4 p.Conference Paper

Radiative recombination coefficient of free carriers in GaAs-AlGaAs quantum wells and its dependence on temperatureMATSUSUE, T; SAKAKI, H.Applied physics letters. 1987, Vol 50, Num 20, pp 1429-1431, issn 0003-6951Article

Optical probe of InAs/GaAs self-assembled quantum dots grown using low growth rate and growth interruptionsLACHAB, M; SAKAKI, H.Applied surface science. 2008, Vol 254, Num 11, pp 3385-3390, issn 0169-4332, 6 p.Article

Spontaneous spin polarization in quantum wiresFASOL, G; SAKAKI, H.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1994, Vol 70, Num 3, pp 601-616, issn 0958-6644Article

Spontaneous spin polarization of ballistic electrons in single-mode quantum wires due to spin splittingFASOL, G; SAKAKI, H.Applied physics letters. 1993, Vol 62, Num 18, pp 2230-2232, issn 0003-6951Article

Interface roughness scattering and electron mobility in quantum wiresMOTOHISA, J; SAKAKI, H.Applied physics letters. 1992, Vol 60, Num 11, pp 1315-1317, issn 0003-6951Article

MBE growth and optical properties of novel corrugated-interface quantum wellsTANAKA, M; SAKAKI, H.Japanese journal of applied physics. 1988, Vol 27, Num 11, pp L2025-L2028, issn 0021-4922, part 2Article

Precise control of resonant tunneling current in AlAs/GaAs/AlAs double barrier diodes with atomically-controlled barrier widthsTSUCHIYA, M; SAKAKI, H.Japanese journal of applied physics. 1986, Vol 25, Num 3, pp L185-L187, issn 0021-4922, 2Article

Quasi-one-dimensional electron gas and its magnetic depopulation in a quantum wire prepared by overgrowth on a cleaved edge of AlGaAs/GaAs multiple quantum wellsMOTOHISA, J; SAKAKI, H.Applied physics letters. 1993, Vol 63, Num 13, pp 1786-1788, issn 0003-6951Article

Electron relaxation in a quantum dot : significance of multiphonon processesINOSHITA, T; SAKAKI, H.Physical review. B, Condensed matter. 1992, Vol 46, Num 11, pp 7260-7263, issn 0163-1829Article